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| LED - Chip Preliminary Radiation Infrared Type MQW 10.04.2007 Technology InGaAs/InP ELC-1300-17 rev. 04/06 Electrodes P (anode) up 360 300 typ. dimensions (m) typ. thickness 260 (20) m anode gold alloy, 1.5 m cathode gold alloy, 0.5 m LED-11 R 6 11 360 Maximum Ratings Tamb = 25C, unless otherwise specified Test Parameter conditions Forward current (DC) Peak forward current tP 50 s, = 1/2 t P/T Symbol IF IFM Min Typ Max 100 200 Unit mA mA Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Forward voltage Reverse voltage Radiant power1 Radiant power1 Radiant power2 Peak wavelength Spectral bandwidth at 50% Switching time 1 2 Symbol Min Typ Max Unit IF = 20 mA IF = 100 mA IR = 100 A IF = 20 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA VF VF VR e e e p 0.5 tr, tf 1250 5 0.65 2.5 0.85 0.95 1.0 1.1 V V V 0.95 3.5 7.0 1300 70 10 1350 mW mW mW nm nm ns Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Type EL-1300-17 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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